ÅÅ»ÒÉôÉÊÄÌÈΡ§¥¿¥«¥Ò¥íÅÅ»Ò

• P-ROM MB7118H
• 495±ß¡ÊËÜÂβÁ³Ê 450±ß¡¢ÀÇ 45±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

Schottky TTL 2K(256x8) Bipolar P-ROM 35ns

H-¤¤-03

• P-ROM MB7136E
• 1,760±ß¡ÊËÜÂβÁ³Ê 1,600±ß¡¢ÀÇ 160±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

2048*8bit P-ROM

D-1-1

• P-ROM MB7144E
• 880±ß¡ÊËÜÂβÁ³Ê 800±ß¡¢ÀÇ 80±ß¡Ë

64K(8Kx8bit) TTL PROM,65ns

H-B-7-3/H-B-10-3

• EPROM TMM27256BD-15
• 1,210±ß¡ÊËÜÂβÁ³Ê 1,100±ß¡¢ÀÇ 110±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

32,768words x 8Bits UV Erasable EPROM
5V 150ns
A-5-11

• EPROM 27C256-15/SO
• 385±ß¡ÊËÜÂβÁ³Ê 350±ß¡¢ÀÇ 35±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

256K (32K x 8) CMOS EPROM
150ns
A-5-11/H-¥µ-65

• EP-ROM M27C256B-12F1
• 935±ß¡ÊËÜÂβÁ³Ê 850±ß¡¢ÀÇ 85±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

EPROM 256K (32KX8) 120ns

A-5-11/2F-M-H-2/H-¥±-06

• EP-ROM M5L2764K
• 825±ß¡ÊËÜÂβÁ³Ê 750±ß¡¢ÀÇ 75±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

8Kx8 nMOS EPROM,250ns CDIP-28

A-5-10/2F-S-25-1/H-Ãæ¥â-7

• P-ROM AM27S191ADC
• 2,090±ß¡ÊËÜÂβÁ³Ê 1,900±ß¡¢ÀÇ 190±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

16,384-bit (2048x8) bipolar PROM

A-6-19

• PROM UPB419C
• 2,530±ß¡ÊËÜÂβÁ³Ê 2,300±ß¡¢ÀÇ 230±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

PROM 16384(2048x8) BIT BIPOLAR TTL
PDIP24

H-¥¨-10

• EPROM MBM27128
• 1,331±ß¡ÊËÜÂβÁ³Ê 1,210±ß¡¢ÀÇ 121±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

UV Erasable 131,072-Bit(16Kx8) nMOS EPROM

25:A-5-12/20:2F-E-H-1

• EPROM MBM27C64
• 473±ß¡ÊËÜÂβÁ³Ê 430±ß¡¢ÀÇ 43±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

CMOS 64K-BIT UV EPROM

A-5-10

• ROM MB831124-35
• 1,760±ß¡ÊËÜÂβÁ³Ê 1,600±ß¡¢ÀÇ 160±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

1M-BIT (131,072x 8)CMOS Read Only Memory
350ns
DIP28
A-R

• EEPROM PEEL22CV10A-15
• 1,078±ß¡ÊËÜÂβÁ³Ê 980±ß¡¢ÀÇ 98±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

CMOS Programmable Electrically Erasable Logic Device


2F-H-TAK14-17

• FLASHMEMORY MX28F1000TC-12
• 1,650±ß¡ÊËÜÂβÁ³Ê 1,500±ß¡¢ÀÇ 150±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

1M-BIT [128Kx8] CMOS FLASH MEMORY

A-6-17

• IC AM28F020-95PC
• 4,180±ß¡ÊËÜÂβÁ³Ê 3,800±ß¡¢ÀÇ 380±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

2Megabit (256Kx8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory


G-2-3

• 75¥·¥ê¡¼¥º
• 407±ß¡ÊËÜÂβÁ³Ê 370±ß¡¢ÀÇ 37±ß¡Ë
• ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%

£Í-1-1