¥È¥é¥ó¥¸¥¹¥¿
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- ¥È¥é¥ó¥¸¥¹¥¿ TIP
34B - 495±ß¡ÊËÜÂβÁ³Ê 450±ß¡¢ÀÇ 45±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
PNP silicon power transistor
-120V,-10A,80W
F-6-7
- ¥È¥é¥ó¥¸¥¹¥¿ TIP
-

- ¥È¥é¥ó¥¸¥¹¥¿ 2N3
585 - 3,300±ß¡ÊËÜÂβÁ³Ê 3,000±ß¡¢ÀÇ 300±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
High-Voltage NPN silicon power transistor
300V
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ 2N3
-

- ¥È¥é¥ó¥¸¥¹¥¿ 2N3
725 - 660±ß¡ÊËÜÂβÁ³Ê 600±ß¡¢ÀÇ 60±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN High Speed Saturated Switching Transistors
50V,500mA,850mW,300MHz
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ 2N3
-

- ¥È¥é¥ó¥¸¥¹¥¿ MJE
2955 - 550±ß¡ÊËÜÂβÁ³Ê 500±ß¡¢ÀÇ 50±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
PNP¥È¥é¥ó¥¸¥¹¥¿
10A,60V,90W fT:2MHz
TO-127
2F-G-TAK-14-8 - ¥È¥é¥ó¥¸¥¹¥¿ MJE
-

- ¥È¥é¥ó¥¸¥¹¥¿ 2N3
906 - 44±ß¡ÊËÜÂβÁ³Ê 40±ß¡¢ÀÇ 4±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
PNPÁж˥¸¥ã¥ó¥¯¥·¥ç¥ó¥È¥é¥ó¥¸¥¹¥¿¡ÊBJT¡Ë
-40V,-200mA
2F-G-TAK-14-8 - ¥È¥é¥ó¥¸¥¹¥¿ 2N3
-

- ¥È¥é¥ó¥¸¥¹¥¿ 2N9
18 - 1,320±ß¡ÊËÜÂβÁ³Ê 1,200±ß¡¢ÀÇ 120±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN HF Transistor
15V,50mA,200mW,f:600MHz
2F-G-TAK-14-8 - ¥È¥é¥ó¥¸¥¹¥¿ 2N9
-

- ¥È¥é¥ó¥¸¥¹¥¿ MAT
02FH - 1,078±ß¡ÊËÜÂβÁ³Ê 980±ß¡¢ÀÇ 98±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
Low Noise, Matched
Dual Monolithic Transistor
TO-78 6P
A-R - ¥È¥é¥ó¥¸¥¹¥¿ MAT
-

- IGBT GT60M324
- 528±ß¡ÊËÜÂβÁ³Ê 480±ß¡¢ÀÇ 48±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Å۵¶¦¿¶¥¤¥ó¥Ð¡¼¥¿¡¼¥¹¥¤¥Ã¥Á¥ó¥°ÍÑ
VCES=-900V,VGES=¡Þ25V,IC=-60A,Pc=254W
B-3-10 -

- IGBT¥â¥¸¥å¡¼¥ë M
G30G1JL1 - 2,860±ß¡ÊËÜÂβÁ³Ê 2,600±ß¡¢ÀÇ 260±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
IGBT¥â¥¸¥å¡¼¥ë
VCBO=600V,Ic=30A,Pc=250W
H-B-6 - IGBT¥â¥¸¥å¡¼¥ë M
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 187±ß¡ÊËÜÂβÁ³Ê 170±ß¡¢ÀÇ 17±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-12
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ TD62504P - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
¥·¥ó¥°¥ë¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì¥¤¡Ê¥¨¥ß¥Ã¥¿¥³¥â¥ó¡Ë7²óÏ©
RIN=10.5k¦¸
G-1-13/1F-AL-5/1F-AL-7/H-kaunta\ura-TN-1 - ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-9
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-9
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-9
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-9
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ TD62004AFG - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
7²óÏ©Æþ¤êNPN¥À¡¼¥ê¥ó¥È¥ó¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì¥¤
½ÐÎÏÅÅή¡§500mA,½ÐÎÏÂѰµ¡§20V,ÆþÎÏÄñ¹³¡§10.5K¦¸
G-1-9 - ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ TD62004APG - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
7²óÏ©Æþ¤êNPN¥À¡¼¥ê¥ó¥È¥ó¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì¥¤
½ÐÎÏÅÅή¡§500mA,½ÐÎÏÂѰµ¡§20V,ÆþÎÏÄñ¹³¡§10.5K¦¸
G-1-9 - ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ - 187±ß¡ÊËÜÂβÁ³Ê 170±ß¡¢ÀÇ 17±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
G-1-9
- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ TD62064P - 121±ß¡ÊËÜÂβÁ³Ê 110±ß¡¢ÀÇ 11±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
4chÂçÅÅή¥À¡¼¥ê¥ó¥È¥ó¥·¥ó¥¯¥É¥é¥¤¥Ð
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High sustaining voltage output
35 V (Min) (TD62064P / F, 074P / F)
50 V (Min) (TD62064AP / AF, 074AP / AF)
IOUT=1.5A/ch
G-1-9/H-¥-20 - ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
-

- ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì
¥¤ TD62064AP - 231±ß¡ÊËÜÂβÁ³Ê 210±ß¡¢ÀÇ 21±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
4chÂçÅÅή¥À¡¼¥ê¥ó¥È¥ó¥·¥ó¥¯¥É¥é¥¤¥Ð
½ÐÎÏ¥¯¥é¥ó¥×¥À¥¤¥ª¡¼¥ÉÆâ¢
High sustaining voltage output
35 V (Min) (TD62064P / F, 074P / F)
50 V (Min) (TD62064AP / AF, 074AP / AF)
IOUT=1.5A/ch
G-1-9 - ¥È¥é¥ó¥¸¥¹¥¿¥¢¥ì