¾¦ÉʰìÍ÷
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2N2
905 - 330±ß¡ÊËÜÂβÁ³Ê 300±ß¡¢ÀÇ 30±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
Small Signal Bipolar PNP Transistor
I(C):0.6A,V(BR)CEO:40V,fT:200MHz,TO-5
F-6-7/2F-G-TAK-14-8 - ¥È¥é¥ó¥¸¥¹¥¿ 2N2
-
- ¥È¥é¥ó¥¸¥¹¥¿ TIP
110 - 275±ß¡ÊËÜÂβÁ³Ê 250±ß¡¢ÀÇ 25±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN darlington-connected silicon power transistor
60V,4A,50W
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ TIP
-
- ¥È¥é¥ó¥¸¥¹¥¿ TIP
33B - 495±ß¡ÊËÜÂβÁ³Ê 450±ß¡¢ÀÇ 45±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN silicon power transistor
120V,10A,80W
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ TIP
-
- ¥È¥é¥ó¥¸¥¹¥¿ TIP
34B - 495±ß¡ÊËÜÂβÁ³Ê 450±ß¡¢ÀÇ 45±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
PNP silicon power transistor
-120V,-10A,80W
F-6-7
- ¥È¥é¥ó¥¸¥¹¥¿ TIP
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2N3
585 - 3,300±ß¡ÊËÜÂβÁ³Ê 3,000±ß¡¢ÀÇ 300±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
High-Voltage NPN silicon power transistor
300V
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ 2N3
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2N3
725 - 660±ß¡ÊËÜÂβÁ³Ê 600±ß¡¢ÀÇ 60±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN High Speed Saturated Switching Transistors
50V,500mA,850mW,300MHz
F-6-7 - ¥È¥é¥ó¥¸¥¹¥¿ 2N3
-
- ¥Õ¥©¥È¥«¥×¥é PS2
561L-1 - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
¸÷¥¢¥¤¥½¥ì¡¼¥¿ ¥È¥é¥ó¥¸¥¹¥¿½ÐÎÏ
¹âÀä±ïÂѰµ5000Vrms
1¥Á¥ã¥ó¥Í¥ë 4PINÌ̼ÂÁõ
H-B-14-2 - ¥Õ¥©¥È¥«¥×¥é PS2
-
- ¥Õ¥©¥È¥«¥×¥é PS2
561-1(W) - 121±ß¡ÊËÜÂβÁ³Ê 110±ß¡¢ÀÇ 11±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
¸÷¥¢¥¤¥½¥ì¡¼¥¿ ¥È¥é¥ó¥¸¥¹¥¿½ÐÎÏ
1¥Á¥ã¥ó¥Í¥ë DIP-4(new)
¹âÀä±ïÂѰµ5000Vrms
CTR rank:W(130to260%)
H-67 - ¥Õ¥©¥È¥«¥×¥é PS2
-
- ¥Õ¥©¥È¥«¥×¥é TLP
291 - 116±ß¡ÊËÜÂβÁ³Ê 105±ß¡¢ÀÇ 11±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
Åì¼Ç¥Õ¥©¥È¥«¥×¥é ÀÖ³° LED +¥Õ¥©¥È¥È¥é¥ó¥¸¥¹¥¿
ÊÑ´¹¸úΨ : GB¥é¥ó¥¯ 100% (ºÇ¾®)
4²óÏ©
¡¡C-1-19¡¡ - ¥Õ¥©¥È¥«¥×¥é TLP
-
- ¥ì¥®¥å¥ì¡¼¥¿ MC7
8T05ACT - 330±ß¡ÊËÜÂβÁ³Ê 300±ß¡¢ÀÇ 30±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
ÀµÅŸ»3ü»Ò¥ì¥®¥å¥ì¡¼¥¿(ON¥»¥ß¥³¥ó¥À¥¯¥¿)
+5V,3A
H-C-2-2 - ¥ì¥®¥å¥ì¡¼¥¿ MC7
-
- S-RAM MB8421-12L
P - 2,530±ß¡ÊËÜÂβÁ³Ê 2,300±ß¡¢ÀÇ 230±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
16KBIT Dual Port RAM (SRAM)
CMOS SDIP-52 120ns
2F-N-TAK-55-4 - S-RAM MB8421-12L
-
- S-RAM(QFP) MB842
1-90LPFQ - 2,750±ß¡ÊËÜÂβÁ³Ê 2,500±ß¡¢ÀÇ 250±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
16KBIT Dual Port RAM (SRAM)
CMOS QFP-64 90ns
2F-N-TAK-55-4 - S-RAM(QFP) MB842
-
- S-RAM UPD43256A
- 1,650±ß¡ÊËÜÂβÁ³Ê 1,500±ß¡¢ÀÇ 150±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
32768x8-bit static MOS RAM,120ns or100ns,
mini flat-28
2F-N-TAK-55-4 -
- S-RAM HM6264ALP-
12 - 880±ß¡ÊËÜÂβÁ³Ê 800±ß¡¢ÀÇ 80±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
64K(8192-word¡ß8-bit) High Speed CMOS S-RAM
120ns DIP-28
H-ĹȢ7 - S-RAM HM6264ALP-
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2SD
1247-S - 132±ß¡ÊËÜÂβÁ³Ê 120±ß¡¢ÀÇ 12±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
ÂçÅÅή¶îưÍÑNPN¥È¥é¥ó¥¸¥¹¥¿
VCEO:30V Ic:2.5A Pc:8W
hFE(Ž×ŽÝޏS):140¡Á280 fT:150MHz
2F-N-TAK55-2 - ¥È¥é¥ó¥¸¥¹¥¿ 2SD
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2SD
400 - 165±ß¡ÊËÜÂβÁ³Ê 150±ß¡¢ÀÇ 15±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
Äã¼þÇÈÅÅÎÏÁýÉýÍÑNPN¥È¥é¥ó¥¸¥¹¥¿
VCEO:25V Ic:1A Pc:900mW
hFE(Ž×ŽÝޏE):100¡Á200
hFE(Ž×ŽÝޏF):160¡Á320
fT:180MHz
2F-N-TAK55-2 - ¥È¥é¥ó¥¸¥¹¥¿ 2SD
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2SD
1803-S - 231±ß¡ÊËÜÂβÁ³Ê 210±ß¡¢ÀÇ 21±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
¹âÅÅή¥¹¥¤¥Ã¥Á¥ó¥°NPN¥È¥é¥ó¥¸¥¹¥¿
VCEO:50V Ic:5A Pc:20W(Tc=25C)
hFE(Ž×ŽÝޏS):140¡Á280 fT:180MHz
2F-N-TAK55-2 - ¥È¥é¥ó¥¸¥¹¥¿ 2SD
-
- ¥Ï¥ó¥ÀµÛ¼èÀþ H-3
7-2.5 - 352±ß¡ÊËÜÂβÁ³Ê 320±ß¡¢ÀÇ 32±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
¥Ï¥ó¥ÀµÛ¼èÀþ
Éý2.5mm x 1.5m
2F-N-TAK55-3 - ¥Ï¥ó¥ÀµÛ¼èÀþ H-3
-
- ¥È¥é¥ó¥¸¥¹¥¿ 2SC
536-F - 77±ß¡ÊËÜÂβÁ³Ê 70±ß¡¢ÀÇ 7±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
NPN TRANSISTOR ÈÆÍÑÁýÉýÍÑ
VCBO=40V,IC=100mA,PC=400mW
HFE=160-320 CASE:TO-92
2F-N-TAK55-3/H-¸÷-¥æ-TAK-05 - ¥È¥é¥ó¥¸¥¹¥¿ 2SC
-
- TTL-ALS SN74ALS5
69AN - 649±ß¡ÊËÜÂβÁ³Ê 590±ß¡¢ÀÇ 59±ß¡Ë
- ¥Ý¥¤¥ó¥È´Ô¸µ¡§1%
3¥¹¥Æ¡¼¥È½ÐÎÏ¡¢Æ±´ü4¥Ó¥Ã¥È¡¦¥¢¥Ã¥× / ¥À¥¦¥ó¡¦¥Ð¥¤¥Ê¥ê¡¦¥«¥¦¥ó¥¿
DIP-20
I-3-4 - TTL-ALS SN74ALS5